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data sheet 1 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 general description the ap2120 series are positive voltage regulator ics fabricated by cmos proce ss. each of these ics con- sists of a voltage reference, an error amplifier, a resis- tor network for setting output voltage, a current limit circuit for current protection. the ap2120 series feature high supply voltage ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low cu rrent consumption which make them ideal for use in various battery-powered devices. the ap2120 series have 1.2v, 1.3v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.2v, 3.3v, 3.6v, 4.0v and 5.0v versions. the ap2120 are av ailable in standard sot-23, sot-89 and to-92 packages. features low dropout voltage at i out =100ma: 200mv typical (except 1.2v, 1.3v and 1.5v versions) low quiescent current: 25 a typical high ripple rejection: 65db typical f=1khz output current: more than 150ma (250ma limit) extremely low noise: 15 vrms@v out =1.2v, 1.3v, 1.5v (10hz to 100khz) excellent line regulation: 4mv typical excellent load regulation: 12mv typical high output voltage accuracy: 2% excellent line transient response and load transient response compatible with low esr ceramic capacitor (as low as 1 f) applications mobile phones, cordless phones wireless communication equipment portable games cameras, video recorders sub-board power supplies for telecom equip- ment battery powered equipment figure 1. package types of ap2120 sot-23 to-92 (bulk packing) to-92 (ammo packing) sot-89
data sheet 2 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 pin configuration figure 2. pin configuration of ap2120 (top view) v out n/na package (sot-23) v in gnd pin description pin number pin name function sot-23 (n) sot-23 (na) sot-89/ to-92 1 3 1 gnd ground 223v out regulated output voltage 312v in input voltage 3 2 1 n na v out v in 3 2 1 gnd 1 2 3 1 2 3 z package (to-92 (bulk packing)) 123 z package (to-92 (ammo packing)) gnd v in v out v in gnd v out v in gnd r package (sot-89) v out
data sheet 3 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 functional block diagram figure 3. functional block diagram of ap2120 vref current limit v in v out gnd 1(3){1} 3(1){2} 2(2){3} a(b){c} a for sot-23 (n) b for sot-23 (na) c for sot-89/to-92
data sheet 4 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 ordering information package temperature range output voltage part number marking id packing type sot-23 -40 to 85 o c 1.2v(n) ap2120n-1.2trg1 gr4 tape & reel 1.3v(n) ap2120n-1.3trg1 gr5 tape & reel 1.5v(n) ap2120n-1.5trg1 gr6 tape & reel 1.8v(n) ap2120n-1.8trg1 gr7 tape & reel 2.5v(n) ap2120n-2.5trg1 gr8 tape & reel 2.8v(n) ap2120n-2.8trg1 gr9 tape & reel 3.0v(n) ap2120n-3.0trg1 gs2 tape & reel 3.2v(n) ap2120n-3.2trg1 gs3 tape & reel 3.3v(n) ap2120n-3.3trg1 gs4 tape & reel 3.6v(n) ap2120n-3.6trg1 gz8 tape & reel 4.0v(n) ap2120n-4.0trg1 gz9 tape & reel 5.0v(n) ap2120n-5.0trg1 gs5 tape & reel sot-23 -40 to 85 o c 3.3v(na) ap2120na-3.3trg1 gz1 tape & reel 3.6v(na) ap2120na-3.6trg1 gaa tape & reel 4.0v(na) ap2120na-4.0trg1 gba tape & reel sot-89 -40 to 85 o c 1.2v ap2120r-1.2trg1 g13q tape & reel 1.3v ap2120r-1.3trg1 g17q tape & reel 1.5v ap2120r-1.5trg1 g22q tape & reel 1.8v ap2120r-1.8trg1 g27q tape & reel circuit type package tr: tape and reel or ammo 1.5: fixed output 1.5v 2.5: fixed output 2.5v n/na: sot-23 3.0: fixed output 3.0v 1.8: fixed output 1.8v 2.8: fixed output 2.8v 3.2: fixed output 3.2v 1.3: fixed output 1.3v 1.2: fixed output 1.2v g1: green 3.3: fixed output 3.3v 5.0: fixed output 5.0v ap2120 - 3.6: fixed output 3.6v 4.0: fixed output 4.0v z: to-92 r: sot-89 blank: bulk
5 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 bcd semiconductor's products, as designated with "g1" suffix in the pa rt number, are rohs compliant and green. ordering information (continued) package temperature range output voltage part number marking id packing type sot-89 -40 to 85 o c 2.5v ap2120r-2.5trg1 g28q tape & reel 2.8v ap2120r-2.8trg1 g31q tape & reel 3.0v ap2120r-3.0trg1 g33q tape & reel 3.2v ap2120r-3.2trg1 g37q tape & reel 3.3v ap2120r-3.3trg1 g41q tape & reel 3.6v ap2120r-3.6trg1 g42q tape & reel 4.0v ap2120r-4.0trg1 g43q tape & reel 5.0v ap2120r-5.0trg1 g70q tape & reel to-92 -40 to 85 o c 1.2v ap2120z-1.2g1 2120z-1.2g1 bulk 1.2v ap2120z-1.2trg1 2120z-1.2g1 ammo 1.3v ap2120z-1.3g1 2120z-1.3g1 bulk 1.3v ap2120z-1.3trg1 2120z-1.3g1 ammo 1.5v ap2120z-1.5g1 2120z-1.5g1 bulk 1.5v ap2120z-1.5trg1 2120z-1.5g1 ammo 1.8v ap2120z-1.8g1 2120z-1.8g1 bulk 1.8v ap2120z-1.8trg1 2120z-1.8g1 ammo 2.5v ap2120z-2.5g1 2120z-2.5g1 bulk 2.5v ap2120z-2.5trg1 2120z-2.5g1 ammo 2.8v ap2120z-2.8g1 2120z-2.8g1 bulk 2.8v ap2120z-2.8trg1 2120z-2.8g1 ammo 3.0v ap2120z-3.0g1 2120z-3.0g1 bulk 3.0v ap2120z-3.0trg1 2120z-3.0g1 ammo 3.2v ap2120z-3.2g1 2120z-3.2g1 bulk 3.2v ap2120z-3.2trg1 2120z-3.2g1 ammo 3.3v ap2120z-3.3g1 2120z-3.3g1 bulk 3.3v ap2120z-3.3trg1 2120z-3.3g1 ammo 3.6v ap2120z-3.6g1 2120z-3.6g1 bulk 3.6v ap2120z-3.6trg1 2120z-3.6g1 ammo 4.0v ap2120z-4.0g1 2120z-4.0g1 bulk 4.0v ap2120z-4.0trg1 2120z-4.0g1 ammo 5.0v ap2120z-5.0g1 2120z-5.0g1 bulk 5.0v ap2120z-5.0trg1 2120z-5.0g1 ammo
data sheet 6 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 parameter symbol value unit input voltage v in 6.5 v enable input voltage v ce -0.3 to v in +0.3 v output current i out 300 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (note 2) ja sot-23 250 o c/w sot-89 165 to-92 180 esd (human body model) esd 2000 v esd (machine model) esd 200 v absolute maximum ratings (note 1) note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent dama ge to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond t hose indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings" for extended periods may affect device reliability. note 2: absolute maximum ratings indica te limits beyond which damage to the com ponent may occur. el ectrical specifica- tions do not apply when operating the devi ce outside of its operating ratings. the maximum allowa ble power dissipation is a function of the maximum junction temperature, t j(max), the junction-to-ambient thermal resistance, ja, and the ambient tem- perature, t a. the maximum allowable power dissipation at any ambient temperature is calculated using: p d(max) =(t j(max) - t a )/ ja. exceeding the maximum allowable power dissipation will result in excessive die temperature. parameter symbol min max unit input voltage v in 26 v operating junction temperature range t j -40 85 o c recommended operating conditions
7 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 electrical characteristics ap2120-1.2 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.2v 1ma i out 30ma 1.176 1.2 1.224 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.2v 1ma i out 80ma 12 40 mv line regulation v rline 2.2v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 700 900 mv i out =100ma 700 900 i out =150ma 700 900 i out =200ma 700 900 quiescent current i q v in =2.2v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.2v 65 db output voltage temperature coefficient v out / t i out =30ma 120 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c, i out =0 10hz f 100khz 15 vrms (v in =2.2v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
data sheet 8 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 electrical characteristics (continued) ap2120-1.3 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.3v 1ma i out 30ma 1.274 1.3 1.326 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.3v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 600 800 mv i out =100ma 600 800 i out =150ma 600 800 i out =200ma 600 800 quiescent current i q v in =2.3v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.3v 65 db output voltage temperature coefficient v out / t i out =30ma 130 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c, i out =0 10hz f 100khz 15 vrms (v in =2.3v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
9 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 ap2120-1.5 electrical characteristics electrical characteristics (continued) (v in =2.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit output voltage v out v in =2.5v 1ma i out 30ma 1.47 1.5 1.53 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.5v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 400 600 mv i out =100ma 400 600 i out =150ma 400 600 i out =200ma 400 600 quiescent current i q v in =2.5v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.5v 65 db output voltage temperature coefficient v out / t i out =30ma 150 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c, i out =0 10hz f 100khz 15 vrms
data sheet 10 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 electrical characteristics (continued) ap2120-1.8 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.8v 1ma i out 30ma 1.764 1.8 1.836 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.8v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =2.8v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.8v 65 db output voltage temperature coefficient v out / t i out =30ma 180 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =2.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
11 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 electrical characteristics (continued) ap2120-2.5 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =3.5v 1ma i out 30ma 2.45 2.5 2.55 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =3.5v 1ma i out 80ma 12 40 mv line regulation v rline 3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =3.5v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =3.5v 65 db output voltage temperature coefficient v out / t i out =30ma 250 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =3.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
data sheet 12 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 electrical characteristics (continued) ap2120-2.8 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =3.8v 1ma i out 30ma 2.744 2.8 2.856 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =3.8v 1ma i out 80ma 12 40 mv line regulation v rline 3.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =3.8v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =3.8v 65 db output voltage temperature coefficient v out / t i out =30ma 280 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =3.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
13 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 electrical characteristics (continued) ap2120-3.0 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =4v 1ma i out 30ma 2.94 3.0 3.06 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4v 1ma i out 80ma 12 40 mv line regulation v rline 3.5v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =4v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4v 65 db output voltage temperature coefficient v out / t i out =30ma 300 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =4v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
data sheet 14 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 electrical characteristics (continued) ap2120-3.2 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =4.2v 1ma i out 30ma 3.136 3.2 3.264 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.2v 1ma i out 80ma 12 40 mv line regulation v rline 3.7v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =4.2v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4.2v 65 db output voltage temperature coefficient v out / t i out =30ma 320 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =4.2v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
15 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 ap2120-3.3 electrical characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =4.3v 1ma i out 30ma 3.234 3.3 3.366 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.3v 1ma i out 80ma 12 40 mv line regulation v rline 3.8v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =4.3v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4.3v 65 db output voltage temperature coefficient v out / t i out =30ma 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =4.3v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
data sheet 16 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 electrical characteristics (continued) ap2120-3.6 electrical characteristics (v in =4.6v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit output voltage v out v in =4.6v 1ma i out 30ma 3.528 3.6 3.672 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.6v 1ma i out 80ma 12 40 mv line regulation v rline 4.6v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =4.6v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4.6v 65 db output voltage temperature coefficient v out / t i out =30ma 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms
17 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 electrical characteristics (continued) ap2120-4.0 electrical characteristics (v in =5.0v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit output voltage v out v in =5.0v 1ma i out 30ma 3.92 4.0 4.08 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =5.0v 1ma i out 80ma 12 40 mv line regulation v rline 5v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =5.0v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =5.0v 65 db output voltage temperature coefficient v out / t i out =30ma 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms
data sheet 18 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 parameter symbol conditions min typ max unit output voltage v out v in =6.0v 1ma i out 30ma 4.9 5.0 5.1 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.3v 1ma i out 80ma 12 40 mv line regulation v rline 5.5v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 200 300 i out =150ma 300 500 quiescent current i q v in =6.0v, i out = 0ma 25 50 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =6.0v 65 db output voltage temperature coefficient v out / t i out =30ma 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms (v in =6.0v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2120-5.0 electrical characteristics electrical characteristics (continued)
19 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 typical performance characteristics figure 4. output voltage vs. output current figure 7. quiescent curr ent vs. output current figure 6. quiescent current vs. input voltage 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0 0.5 1.0 1.5 2.0 2.5 output voltage (v) output current (a) ap2120-2.5 t c =-40 o c t c =25 o c t c =85 o c v in =3.5v -40-20 0 20406080100120 2.490 2.495 2.500 2.505 2.510 2.515 2.520 2.525 2.530 2.535 output voltage (v) case temperature ( o c) ap2120-2.5 i out =10ma i out =50ma i out =100ma i out =150ma v in =3.5v 0123456 0 5 10 15 20 25 30 35 quiescent current ( a) input voltage (v) ap2120-2.5 t c =-40 o c t c =25 o c t c =85 o c i out =0 0.00 0.05 0.10 0.15 0.20 25 30 35 40 45 50 55 quiescent current ( a) output current (a) ap2120-2.5 t c =-40 o c t c =25 o c t c =85 o c v in =3.5v figure 5. output voltage vs. case temperature
data sheet 20 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 typical performance ch aracteristics (continued) figure 8. quiescent current vs. case temperature figure 10. dropout voltage vs. case temperature figure 9. dropout voltage vs. output current figure 11. load transient (i out =0 to 150ma) -40-20 0 20406080100120 10 15 20 25 30 35 40 45 50 quiescent current ( a) case temperature ( o c) ap2120-2.5 v in =3.5v i out =0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 50 100 150 200 250 300 350 400 dropout voltage (v) output current (a) ap2120-2.5 t c =-40 o c t c =25 o c t c =85 o c -40 -20 0 20 40 60 80 0 50 100 150 200 250 300 350 400 450 dropout voltage (v) case temperature ( o c) ap2120-2.5 i out =10ma i out =80ma i out =150ma v out (50mv/div) i out (50ma/div) 0 50 -50 0 50 100 150 -100 ap2120-2.5
21 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 typical performance ch aracteristics (continued) figure 13. psrr vs. frequency figure 12. line transient figure 14. start-up v out (50mv/div) v in ( 1 v / d i v ) 0 50 -50 2 1 0 (condition:v in =2.5v to 3.5,i out =10ma) v in (0.5v/div) 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 0.5 0 1.0 1.5 2.0 2.5 v out (0.5v/div) ap2120-2.5 input voltage output voltage ap2120-2.5 i out =150ma i out =10ma ap2120-2.5 3.0
data sheet 22 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 v in ap2120-2.5 c in 1 f c out 1 f v out v in v out gnd v in =3.5v v out =2.5v typical application figure 15. typical application of ap2120 note: filter capacitors are required at the ap2120's input and output. 1 f capacitor is required at the input. the minimum output capacitance required for stability should be more than 1 f with esr from 0.01 to 100 . ceramic capacitors are recommended.
23 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 mechanical dimensions sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.890(0.035) 1.030(0.041) 0.300(0.012) 0.510(0.020) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.010(0.0004) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.180(0.007) r0.100(0.004) 0.0 ~ 10.0
data sheet 24 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
25 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 data sheet mar. 2013 rev. 1. 4 mechanical dimens ions (continued) to-92 (bulk packing) unit: mm(inch) 2.420(0. 095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0. 039) 1.400(0. 055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015)
data sheet 26 mar. 2013 rev. 1. 4 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2120 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0. 000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1.600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 ) to-92 (ammo packing) unit: mm(inch) mechanical dimens ions (continued)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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